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Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices. New developments in the growth of bulk SiC single-crystal materials, advances in the epitaxial growth of SiC, and progress in the characterization of materials properties and defects in SiC are featured. The volume also highlights the development of devices manufactured on this wide-bandgap semiconductor including: innovative device designs; characterization of device and materials properties; and improvements in wide-bandgap processing technology.

For librarians, library administrators, and urban and regional planners, Dudley, a librarian and city planner who teaches and researches at the Institute of Urban Studies and in environmental studies

This comprehensive handbook provides an overview and update of the issues, theories, processes, and applications of the social science of population studies. The volume's 30 chapters cover the full r

This book is the classic source of empirical information on the patterns of occupational achievement in American society. Based on an unusually comprehensive set of data, it is renowned for its pionee

The Ouse valley, East Sussex, is a key communication route from the Channel coast, via the Downs (and the historic county town of Lewes), to the wide expanse of the Weald. It traverses and encompasses

People with mental disorders often suffer the worst conditions of life - a problem exacerbated by social stigma. In practice, the international community still tends to prioritise human rights in a ma

Papers from an April 2004 symposium reflect the current focus in the field on wide bandgap semiconductor silicon carbide for electronic device applications. Papers are presented in sections on bulk gr

The Springer Handbook of Crystal Growth brings together the science and technology of growing crystals, defect characterization and techniques, and understanding the defect formation including defects