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Gate Stack and Silicide Issues in Silicon：VOLUME670
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From the April 2001 symposium come 38 papers related to finding new materials that will allow the scaling of microelectronic devices below the 100-nanometer mode. The largest selection of the papers deal with attempts to find a replacement for silicon dioxide, with hafnium oxide, zirconium dioxide, their silicates and aluminates, and other materials all considered. The other major focus is the material and process used to form the self-aligned silicide. The extension of the usefulness of titanium silicide, the possibilities of using cobalt silicide and nickel silicide, and the insights provided electron microscopy of metal-silicide interactions are discussed. Annotation c. Book News, Inc., Portland, OR (booknews.com)
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