The Advanced Metallization Conference (AMC) marked its twentieth anniversary in 2003. Technical leaders from around the world gather to discuss developments in the areas of interconnect performance, advanced metallization, low-dielectric constant materials, barrier metallization, atomic layer deposition, vertical integration, advanced packaging and optical interconnects. In particular, presentations highlight both the advances and future challenges associated with multilevel interconnect. The latest developments in the integration of copper-based metallization with low-dielectric constant materials, and advances in the understanding of copper morphology and the reliability of the component materials of interconnect systems, are featured. Additional contributions discuss the development of advanced materials and advanced process technologies. Optimization of interconnect performance and density, and alternatives to metal-based interconnect, are addressed in papers on interconnect
With the increased complexity of modern integrated circuits, it is important that reliability problems be attacked properly with the appropriate tools. This volume recognizes that almost all reliability problems are materials problems, and helps to put 'reliabilty physics' on a firm scientific foundation. Topics include: electromigration; stress effects on reliability; stress and packaging; metallization; device, oxide and dielectric reliability; new investigative techniques; corrosion.
This book provides a forum for researchers who have been using a variety of electrical measurements as a means to obtain microstructural information about their materials. Microstructure in this context includes features at all length scales - atomic to macroscopic. Even though numerous examples of microstructure/electrical property correlations exist, this book focuses on the myriad of applications that have already been successful. In addition, advances in techniques for the interpretation of data and modelling of materials-related phenomena are emphasized. The effects of percolation and connectivity of electrical paths are of particular interest as they determine the resultant electrical response. These in turn are intimately linked to how a material is processed, what phases it contains, and how the phases are distributed in real space. All classes of materials are covered including semiconductors, electroceramics, biological materials, polymers, metals, geomaterials and a variety
Defect engineering has come of age. That theme is well documented by both the academic and industrial research communities in this book from MRS. Going beyond defect control, the book explores the engineering of desired properties in semiconductor materials and devices through the deliberate introduction and manipulation of defects and impurities. Papers are grouped around ten distinct topics covering materials, processing and devices. Topics include: grown-in defects in bulk crystals; grown-in defects in thin films; gettering and related phenomena; hydrogen interaction with semiconductors; defect issues in widegap semiconductors; defect characterization; ion implantation and process-induced defects; defects in devices; interfaces, quantum wells and superlattices; and defect properties, reaction, activation and passivation.
This book brings together scientists from diverse research communities to focus on four different aspects of fracture - instability dynamics, scaling/fractal geometry, the brittle/ductile transition, and fracture at interfaces. In each case, theoretical issues, as well as experimental and computer-simulated techniques, are addressed. Materials of interest range from ceramics to thin films, multilayer structures, composites and bulk crystals. Topics include: brittle/ductile behavior and crack tip processes; dislocations - theory/simulation approaches; fracture at interfaces - the role of impurities; fracture in ceramics and composites; dynamic instabilities in fracture; fractals and scaling in fracture; and friction, wear and peel processes.
This book provides an international and interdisciplinary forum for the discussion of advances in the research of nanophase and nanocomposites. The term 'nanophase' refers to nanoscale particles of one phase, whereas the term 'nanocomposite'refers to a composite of more than one Gibbsian solid phase where at least one dimension is in the nanometer range. The book, the second in a series, features reports showing that bulk materials with nanostructure (‹ 0.5µm) often have enhanced and unique properties when compared to their coarse-structured (›1µm) equivalents. A wide range of science and engineering disciplines are represented, with topics ranging from synthesis and processing, to properties and applications. Topics include: nanophase oxides; nanophase metals, alloys and non-oxides; nanophases - simulation studies; magnetic and metal nanocomposites; oxide, non-oxide and oxide-metal nanocomposites; organic-inorganic and sol-gel nanocomposites; and nanocomposites of layered and
This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (～400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.
Many advances in research and development have been made since the first MRS symposium on high-temperature ordered intermetallic alloys was held in 1984. That conference demonstrated a resurgence of interest in potential uses of intermetallic alloys for structural applications. Blossoming research in the field brings us to this book which has focused specifically on processing and microstructural control, alloy design, mechanical properties and industrial applications. Examples of structural applications of the 'mature' intermetallics, TiAl and Ni3Al are also featured. Evidence also suggests that high-melting-temperature refractory or platinum group metal-based intermetallics, still in the 'exotic' category, may yet represent the best potential for a breakthrough in high-temperature performance. Topics include: processing; titanium aluminides; creep and fatigue of titanium aluminides; iron aluminides; nickel aluminides; refractory metal-based and other intermetallics and composites.
The primary goal of a materials scientist is a predictive understanding of materials properties and that requires a clear picture of the role played by electrons in determining the materials' behavior. Only then can one hope to design and build new materials with desired physical, chemical and engineering characteristics. Research is carried out on the basis of quantum mechanics, through solution of the so-called single-particle Schrödinger equation that describes the behavior of electrons in a solid. This book describes one formal approach to solving the Schrödinger equation developed within the framework of multiple scattering theory (MST). It offers a comprehensive and welcome entrée to the field of electronic structure of solids and should serve as a treatise for advanced undergraduates, graduate students and researchers in the field. Topics Include: concepts and formalism; periodic solids and impurities; substitutional alloys; surfaces and interfaces; transport; phonons and
This book celebrates a decade for this popular series on dynamics in small confining systems. It covers a broad range of topics related to static and dynamic properties of confining systems: probing of confined systems, structure and dynamics of liquids at interfaces, nanorheology and tribology, adsorption, diffusion in pores, polymers and membranes, dielectric relaxation and biological aspects. Participants from various disciplines share different points of view on the questions of how ultrasmall geometries can force a system to behave in ways significantly different from its behavior in the bulk, how this difference affects molecular properties, and how it is probed.
This book focuses on recent work in on-chip interconnects and other aspects of advanced metallization. In particular, the concentration for this year's volume is on the rapid advances in copper and low-K. The volume is divided into nine parts: Part I contains an invited perspective on the state of semiconductor research and development in Japan; Part II focuses on performance aspects of interconnect architectures; Part III includes some of the most significant recent advances in copper/low-K integration; Part IV is an in-depth collection of electrochemical and chemical processes, mainly pertaining to copper; Part V contains state-of-the-art papers on thin-film diffusion barriers, again mainly for copper wiring; Part VI covers reliability engineering and results; Part VII is a collection of alternative and novel processes and systems related to circuit interconnection; Part VIII contains papers on specific low-K dielectrics and their properties, and new methods for their
Luminescence is presently, and will continue to be, a challenging field of research in materials science, solid-state physics and chemistry. Recent progress in optoelectronic and display technology continues to drive this field in the search for new luminescent materials. Demands on new procedures for synthesis, and understanding underlying luminescence processes in these materials, will create new opportunities for both fundamental and applied research. This book is a compilation of papers, both invited and solicted, from around the world that focus on luminescence and luminescent materials - from theory and modeling, characterization of luminescent materials, and systems with confined structures such as nanocrystallites and quantum wells and dots, to synthesis and device applications.
The purpose of this book, in light of the burgeoning interest in self-assembly processes in materials, is to highlight and centralize research spanning the full range of materials systems, dimensionalities and length scales. Presentations from ten diverse symposia are compiled here to heighten awareness, communication and interaction among self-assembly researchers in nominally disparate fields. While there are many possible definitions of self assembly, for the purposes of this volume, self assembly refers to the deliberate formation of complex, organized superstructures from individual building blocks by exploiting forces and processes that are intrinsic to the system. Building blocks include entities such as molecules, quantum dots, cells, calcium carbonate platelets and dielectric spheres. Directed self assembly, i.e. templating via the additional imposition of external fields or boundary conditions, are also featured. Topics include: organic materials; bio-inspired nanomaterials;
As zeolite science continues to grow, many zeolite conferences and meeting are being held around the world, but the premier venue to present new work continues to be the International Zeolite Conferences. The 12th International Zeolite Conference was held in Baltimore, Maryland, in July 1998, and included 774 participants from 37 different countries. It also spawned this comprehensive four-volume, 3360-page proceedings that covers many diverse areas of zeolite study only touched upon at previous conferences. Topics include: diffusion; adsorption; theory and modeling; structure; industrial applications; synthesis; catalysis; membranes; mesoporous materials; solid-state applications and characterization.
For the past four decades, geometric scaling of silicon CMOS transistors has enabled not only an exponential increase in circuit integration density - Moore's Law - but also a corresponding enhancement in the transistor performance. Simple MOSFET geometric scaling has driven the industry to date. However, as the transistor gate lengths drop below 35nm and the gate oxide thickness is reduced to 1nm, physical limitations such as off-state leakage current and power density make geometric scaling an increasingly challenging task. In order to continue CMOS device scaling, innovations in device structures and materials are required and the industry needs a new scaling vector. Starting at the 90 and 65nm technology generation, strained silicon has emerged as one such innovation. Other device structures such as multigate FETs may be introduced to meet the scaling challenge. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to
Researchers from around the world come together in this proceedings of the 8th International Conference on Quasi-Elastic Neutron Scattering to discuss recent advances in quasi-elastic neutron scattering - in fields ranging from physics to biology - as well as applications, instrumentation, theory and complementary techniques. Topics include: hydration water, water dynamics, protein dynamics, confined molecules, biological systems, molecular dynamics, molecular diffusion, superionic glass, polymers, soft matter, magnetism, and instrumentation.
The Advanced Metallization Conference 2006 - held in Tokyo and San Diego, California - highlights both current state-of-the-art and ongoing challenges associated with multilevel interconnects. Technical leaders from around the world gathered to discuss developments in the integration of low-dielectric constant materials with copper-based metallization, and advances in the means by which process- or stress-induced damage can be mitigated and reliability of the interconnect system improved. Contributions to the volume focus on design, development and modeling of advanced on-chip and multichip interconnect architectures and real-world implementation of optimized designs, materials and processes for production of leading-edge microelectronic devices. A keynote address by H.-S. Philip Wong, Stanford University, on 'Nanostructured Materials for Interconnects' is featured.
This book is part of a popular series on the materials science of MEMS devices. In the years since, many sophisticated devices have emerged and many aspects of MEMS materials behaviors have been characterized. However, there remain many basic questions about the relationship between process, properties and function for MEMS materials. Experimental methods have been developed, but there remains a lack of standardization that would allow comparison between laboratories and commercial vendors or the creation of materials specifications that would enable greater commercialization of MEMS. The book addresses many of these issues including: RF-MEMS; optical MEMS; MEMS metrology, tribology, materials characterization and mechanical behavior; MEMS surfaces, MEMS reliability, packaging and life assessment; MEMS modeling and software tools for materials integration; biocompatibility of MEMS materials and devices; new materials and fabrication methodologies for MEMS; microfluidics and
Nanoindentation and nanotribology are fundamental, evolving, and complementary disciplines within materials science. In recent years there has been rapid convergence of the biomechanical and materials disciplines, as well as explosive growth of the nanotube and nanostructured materials fields. The expansion of nanomechanical testing into these new fields has been accompanied by similarly rapid growth in our understanding of, and ability to perform, mechanical tests with ever-smaller forces and displacements. The understanding of fundamental mechanical measurement techniques must continue to advance to design new systems and materials to meet the challenges of technology. This book is a snapshot of the state of the art in nanoindentation and nanotribology, and highlights emerging topics including the development of new methods for characterizing nanoscale mechanical and tribological properties. Additional topics include: size effects and indentation of thin films; nanotribology and
