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11筆商品,1/1頁

1.Wide Bandgap Semiconductor Power Devices ― Materials, Physics, Design, and Applications

作者:B. Jayant Baliga (EDT)  出版社:Woodhead Pub Ltd  出版日:2018/10/26 裝訂:平裝

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book la

定價:10575元   優惠價: 99518

無庫存,下單後進貨(採購期約45個工作天)

2.Fundamentals of Power Semiconductor Devices

作者:B. Jayant Baliga  出版社:Springer Nature  出版日:2018/10/12 裝訂:精裝

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytic

  優惠價:7200

無庫存,下單後進貨(採購期約45個工作天)

3.Gallium Nitride and Silicon Carbide Power Devices

作者:B. Jayant Baliga  出版社:World Scientific Pub Co Inc  出版日:2017/03/15 裝訂:精裝

During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enh

定價:4352元   優惠價: 93917

無庫存,下單後進貨(採購期約4~10個工作天)

4.The Igbt Device ─ Physics, Design and Applications of the Insulated Gate Bipolar Transistor

作者:B. Jayant Baliga  出版社:Elsevier Science Health Science div  出版日:2015/03/18 裝訂:精裝

The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), ele

定價:6460元   優惠價: 95814

無庫存,下單後進貨(採購期約45個工作天)

5.Advanced High Voltage Power Device Concepts

作者:B. Jayant Baliga  出版社:Springer Verlag  出版日:2011/09/20 裝訂:精裝

The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electr

定價:12105元   優惠價: 910895

無庫存,下單後進貨(採購期約45個工作天)

6.Advanced Power MOSFET Concepts

作者:B. Jayant Baliga  出版社:Springer Verlag  出版日:2010/08/30 裝訂:精裝

Advanced Power MOSFET Concepts provides an in-depth treatment of the physics of operation of innovative power MOSFET device structures. Devices capable of operating over a broad range of voltages from

定價:13500元   優惠價: 912150

無庫存,下單後進貨(採購期約45個工作天)

7.Advanced Power Rectifer Concepts

作者:B. Jayant Baliga  出版社:Springer Verlag  出版日:2009/05/15 裝訂:精裝

During the last decade, many new concepts have been proposed for improving the performance of power rectifiers and transistors. The results of this research are dispersed in the technical literature a

定價:5805元   優惠價: 95225

無庫存,下單後進貨(採購期約45個工作天)

8.Fundamentals of Power Semiconductor Devices

作者:B. Jayant Baliga  出版社:Springer Verlag  出版日:2008/12/30 裝訂:精裝

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analyti

定價:9405元   優惠價: 98465

無庫存,下單後進貨(採購期約45個工作天)

9.Silicon Carbide Power Devices

作者:B. Jayant Baliga  出版社:World Scientific Pub Co Inc  出版日:2006/03/30 裝訂:精裝

Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulti

定價:9405元   優惠價: 98465

無庫存,下單後進貨(採購期約45個工作天)

10.Silicon Carbide Power Devices

作者:B. Jayant Baliga  出版社:World Scientific Pub Co Inc  出版日:2006/01/06 裝訂:平裝

Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulti

定價:3060元   優惠價: 92754

無庫存,下單後進貨(採購期約45個工作天)

11.Silicon Rf Power Mosfets

作者:B. Jayant Baliga  出版社:World Scientific Pub Co Inc  出版日:2005/03/01 裝訂:精裝

The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using

定價:7650元   優惠價: 96885

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