半導體物理性能手冊(第2卷‧下)（簡體書）

足立貞夫編著的《半導體物理性能手冊(第2卷下 )/Springer手冊精選原版系列》介紹了各族半導體、化合物半導體的物理性能，包括： Structural Properties結構特性 Thermal Properties熱學性質 Elastic Properties彈性性質 Phonons and Lattice Vibronic Properties 聲子與晶格振動性質 Collective Effects and Related Properties集體效應及相關性質 Energy-Band Structure：Energy-Band Gaps 能帶結構：能帶隙 Energy—Band Structure：Electron and Hole Effective Masses能帶結構：電子和空穴的有效質量 Electronic Deformation Potential電子形變勢 Electron Affinity and Schottky Barrier Height電子親和能與肖特基勢壘高度 Optical Properties光學性質 Elastooptic，Electrooptic， andNonlinearOptical Properties彈光、電光和非線性光學性質 Carrier Transport Properties載流子輸運性質 《半導體物理性能手冊(第2卷下)/Springer手冊精選原版系列》適用對象包括材料、微電子學、電子科學與技術等專業的本科生和研究生，以及從事半導體研究的專業人員。

Preface
Acknowledgments
Contents of Other Volumes
10 Wurtzite Gallium Nitride (a-GaN)
10.1 Structural Properties
10.1.1 Ionicity
10.1.2 Elemental Isotopic Abundance and Molecular Weight
10.1.3 Crystal Structure and Space Group
10.1.4 Lattice Constant and Its Related Parameters
10.1.5 Structural Phase Transition
10.1.6 Cleavage Plane
10.2 Thermal Properties
10.2.1 Melting Point and Its Related Parameters
10.2.2 Specific Heat
10.2.3 Debye Temperature Preface
Acknowledgments
Contents of Other Volumes
10 Wurtzite Gallium Nitride (a-GaN)
10.1 Structural Properties 
10.1.1 Ionicity 
10.1.2 Elemental Isotopic Abundance and Molecular Weight 
10.1.3 Crystal Structure and Space Group 
10.1.4 Lattice Constant and Its Related Parameters 
10.1.5 Structural Phase Transition 
10.1.6 Cleavage Plane 
10.2 Thermal Properties 
10.2.1 Melting Point and Its Related Parameters 
10.2.2 Specific Heat 
10.2.3 Debye Temperature 
10.2.4 Thermal Expansion Coefficient 
10.2.5 Thermal Conductivity and Diffusivity 
10.3 Elastic Properties 
10.3.1 Elastic Constant 
10.3.2 Third-Order Elastic Constant 
10.3.3 Youngs Modulus, Poissons Ratio, and Similar 
10.3.4 Microhardness 
10.3.5 Sound Velocity 
10.4 Phonons and Lattice Vibronic Properties 
10.4.1 Phonon Dispersion Relation 
10.4.2 Phonon Frequency 
10.4.3 Mode Gruneisen Parameter 
10.4.4 Phonon Deformation Potential 
10.5 Collective Effects and Related Properties 
10.5.1 Piezoelectric Constant 
10.5.2 Frohlich Coupling Constant 
10.6 Energy-Band Structure: Energy-Band Gaps 
10.6.1 Basic Properties 
10.6.2 E0-Gap Region 
10.6.3 Higher-Lying Direct Gap 
10.6.4 Lowest Indirect Gap 
10.6.5 Conduction-Valley Energy Separation 
10.6.6 Direct-Indirect-Gap Transition Pressure 
10.7 Energy-Band Structure: Electron and Hole Effective Masses 
10.7.1 Electron Effective Mass: F Valley 
10.7.2 Electron Effective Mass: Satellite Valley 
10.7.3 Hole Effective Mass 
10.8 Electronic Deformation Potential 
10.8.1 Intravalley Deformation Potential: F Point 
10.8.2 Intravalley Deformation Potential: High-Symmetry Points 
10.8.3 Intervalley Deformation Potential 
10.9 Electron Affinity and Schottky Barrier Height 
10.9.1 Electron Affinity 
10.9.2 Schottky Barrier Height 
10.10 Optical Properties 
10.10.1 Summary of Optical Dispersion Relations 
10.10.2 The Reststrahlen Region 
10.10.3 At or Near the Fundamental Absorption Edge 
10.10.4 The Interband Transition Region 
10.10.5 Free-CarrierAbsorption and Related Phenomena 
10.11 Elastooptic, Electrooptic, and Nonlinear Optical Properties 
10.11.1 Elastooptic Effect 
10.11.2 Linear Electrooptic Constant 
10.11.3 Quadratic Electrooptic Constant
10.11.4 Franz-Keldysh Effect 
10.11.5 Nonlinear Optical Constant 
10.12 Carrier Transport Properties 
10.12.1 Low-Field Mobility: Electrons 
10.12.2 Low-Field Mobility: Holes 
10.12.3 High-Field Transport: Electrons 
10.12.4 High-Field Transport: Holes 
10.12.5 Minority-Carrier Transport: Electrons inp-Type Materials 
10.12.6 Minority-Carrier Transport: Holes in n-Type Materials 
10.12.7 Impact Ionization Coefficient 
11 Cubic Gallium Nitride(b-GaN)
12 Gallium Phosphide(Gap)
13 Gallium Arsenide(GaAs)
14 Gallium Antimonide(GaSb)
15 Indium Nitride(InN)
16 Indium Phosphide(InP)
17 Indium Arsendide(InAs)
18 Indium Antimonide(InSb)