晶體生長手冊5：晶體生長模型及缺陷表徵（簡體書）

《Springer手冊精選系列．晶體生長手冊（第5冊）：晶體生長模型及缺陷表徵（影印版）》介紹了生長工藝和缺陷形成的模型。這些章節驗證了工藝參數和產生晶體質量問題包括缺陷形成的直接相互作用關係。隨後的PartG展示了結晶材料特性和分析的發展。PartF和G說明了預測工具和分析技術在幫助高質量的大尺寸晶體生長工藝的設計和控制方面是非常好用的。

《晶體生長手冊5:晶體生長模型及缺陷表征(影印版)》由哈爾濱工業大學出版社出版。

縮略語
PartF晶體生長及缺陷模型
36熔體生長晶體體材料的傳導和控制
36.1運輸過程的物理定律
36.2熔體的流動結構
36.3外力對流動的控制
36.4前景
參考文獻

37Ⅲ族氮化物的氣相生長
37.1Ⅲ族氮化物的氣相生長概述
37.2AIN/GaN氣相澱積的數學模型
37.3氣相澱積AIN/GaN的表徵
37.4GaN的IVPE生長模型：個案研究
37.5氣相GaIN膜生長的表面形成
37.6結語
參考文獻

38生長直拉矽晶體中連續尺寸量子缺陷動力學
38.1微缺陷的發現
38.2無雜質時的缺陷動力學
38.3有氧時的直拉缺陷動力學
38.4有氮時的直拉缺陷動力學
38.5直拉矽單晶中空位的橫向合併
38.6結論
參考文獻

39熔體基底化合物晶體生長中應力和位錯產生的模型
39.1綜述
39.2晶體生長過程
39.3半導體材料的位錯分佈
39.4位錯產生的模型
39.5晶體的金剛石結構
39.6半導體的變形特性
39.7Haasen模型對晶體生長的應用
39.8替代模式
39.9模型概述和數值實現
39.10數值結果
39.11總結
參考文獻

40BS和EFG系統中的質量和熱量傳輸
40.1雜質分佈的基預測模型：垂直BS系統
40.2雜質分佈的基預測模型-EFG系統
參考文獻

PartG缺陷表徵及技術
41晶體層結構的X射線衍射表徵
41.1X射線衍射
41.2層結構的基本直接X射線衍射分析
41.3設備和理論思考
41.4從低到高的複雜性分析實例
41.5快速分析
41.6薄膜微映射
41.7展望
參考文獻

42晶體缺陷表徵的X射線形貌技術
42.1X射線形貌的基本原則
42.2X射線形貌技術的發展歷史
42.3X射線形貌技術和幾何學
42.4X射線形貌技術理論背景
42.5X射線形貌上缺陷的對比原理
42.6X射線形貌上的缺陷分析
42.7目前的應用狀況和發展
參考文獻
……
43半導體的缺陷選擇性刻蝕
44晶體的透射電子顯微鏡表徵
45點缺陷的電子自旋共振表徵
46半導體缺陷特性的正電子湮沒光譜表徵

So far,we have discussed melt convection and its con-trol for ZM and Bridgman bulk crystal growth through a few examples.As illustrated,the interface shape,which is a key factor for crystal quality,and the com-position uniformity are significantly affected by the convective heat and mass transports due to the flow.We have introduced the basic flow structures through flow visualization experiments and numerical simulations.From these,one can better understand the interplay of the transport processes and the interface in crystal growth processes.The melt flow is affected by body forces,which can be the buoyancy (gravitational and centrifugal),Coriolis,and Lorentz forces.With a free surface,the thermocapillary force can also drive the melt flow.Thermal and solutal gradients are the sources for the buoyancy convection.Therefore,if these gradi-ents are antiparallel to the gravitational or centrifugal acceleration,the convection can be minimized,and this is typically the case for vertical Bridgman growth in normal gravity or growth in a centrifuge under a free-swing configuration.In such a configuration,the flow is much more stable.Nevertheless,the residual flow can induce significant composition nonuniformity.The use of microgravity,magnetic fields,rotation or vibration is useful in manipulating the flow and thus improving crystal uniformity.Furthermore,suppressing the flow also helps improve axial composition uniformity,and a static magnetic field is particularly effective if the melt is electrically conductive.
Although we have not been able to discuss the flow and its control for Czochralski crystal growth,the concepts learned from previous examples are still useful.For example,similar to that in the FZ growth,in Czochralski growth of oxide crystals,the inter-face inversion can be easily controlled by crystal rotation [36.88].However,the convection in the CZ configuration is much more complicated and hard to elucidate.