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Zinc Oxide Materials For Electronic And Optoelectronic Device Applications
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Zinc Oxide Materials For Electronic And Optoelectronic Device Applications

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商品簡介

Zinc Oxide (ZnO) powder has been widely used as a white paint pigment and industrial processing chemical for nearly 150 years. However, following a rediscovery of ZnO and its potential applications in the 1950s, science and industry alike began to realize that ZnO had many interesting novel properties that were worthy of further investigation.

ZnO is a leading candidate for the next generation of electronics, and its biocompatibility makes it viable for medical devices. This book covers recent advances including crystal growth, processing and doping and also discusses the problems and issues that seem to be impeding the commercialization of devices.

Topics include:

  • Energy band structure and spintronics
  • Fundamental optical and electronic properties
  • Electronic contacts of ZnO
  • Growth of ZnO crystals and substrates
  • Ultraviolet photodetectors
  • ZnO quantum wells

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications is ideal for university, government, and industrial research and development laboratories, particularly those engaged in ZnO and related materials research.

作者簡介

The three coeditors, Dr. Cole W. Litton, Dr. Donald C. Reynolds and Dr. Thomas C. Collins, are internationally recognized experts in field of the physics of semiconductors, with an emphasis on the optical, electrical and structural properties and crystal growth of these materials, especially zinc oxide and the other Group II-VI semiconductor materials, as well as the III-V compound semiconductor materials and their electronic and optoelectronic devices. Each of the editors has authored more than 500 scientific/technical papers, book chapters, and technical/scientific books over professional careers that have spanned much of the past 30 to 40 years.

目次

Series Preface.

Preface.

List of Contributors.

1 Fundamental Properties of ZnO (T. C. Collins and R. J. Hauenstein).

1.1 Introduction.

1.2 Band Structure.

1.3 Optical Properties.

1.4 Electrical Properties.

1.5 Band Gap Engineering.

1.6 Spintronics.

1.7 Summary.

2 Optical Properties of ZnO (D. C. Reynolds, C. W. Litton and T. C. Collins).

2.1 Introduction.

2.2 Free Excitons.

2.3 Strain Splitting of the G5 and G6 Free Excitons in ZnO.

2.4 Photoluminescence from the Two Polar Faces of ZnO.

2.5 Bound-Exciton Complexes in ZnO.

2.6 Similarities in the Photoluminescence Mechanisms of ZnO and GaN.

2.7 The Combined Effects of Screening and Band Gap Renormalization on the Energy of Optical Transitions in ZnO and GaN.

2.8 Closely Spaced Donor–Acceptor Pairs in ZnO.

2.9 Summary.

3 Electrical Transport Properties in Zinc Oxide (B. Claflin and D. C. Look).

3.1 Introduction.

3.2 Hall-Effect Analysis.

3.3 Donor States and n-type Doping.

3.4 Hydrogen.

3.5 Acceptor States and p-type Doping.

3.6 Photoconductivity.

3.7 Summary.

4 ZnO Surface Properties and Schottky Contacts (Leonard J. Brillson).

4.1 Historical Background of Schottky Contacts on ZnO.

4.2 Recent Schottky Barrier Studies.

4.3 The Influence of Surface Preparation on Schottky Barriers.

4.4 The Influence of Defects on Schottky Barriers.

4.5 The Influence of ZnO Polarity on Schottky Barriers.

4.6 The Influence of Chemistry.

4.7 Charge Transport and Extended Metal–ZnO Schottky Barriers.

4.8 Conclusion.

5 Native Point Defects and Doping in ZnO (Anderson Janotti and Chris G. Van de Walle).

5.1 Introduction.

5.2 Theoretical Framework.

5.3 Native Point Defects.

5.4 Donor Impurities.

5.5 Acceptor Impurities.

5.6 Isoelectronic Impurities.

6 Spectral Identification of Impurities and Native Defects in ZnO (B.K. Meyer, D.M. Hofmann, J. Stehr and A. Hoffmann).

6.1 Introduction.

6.2 Optical Spectroscopy.

6.3 Magnetic Resonance Investigations.

7 Vapor Transport Growth of ZnO Substrates and Homoepitaxy of ZnO Device Layers (Gene Cantwell, Jizhi Zhang and J.J. Song).

7.1 Introduction.

7.2 Transport Theory and Comparison with Growth Data.

7.3 Characterization.

7.4 In-situ Doping.

7.5 ZnO Homoepitaxy.

7.6 Summary.

8 Growth Mechanisms and Properties of Hydrothermal ZnO (M. J. Callahan, Dirk Ehrentraut, M. N. Alexander and Buguo Wang).

8.1 Introduction.

8.2 Overview of Hydrothermal Solution Growth.

8.3 Thermodynamics of Hydrothermal Growth of ZnO.

8.4 Hydrothermal Growth Techniques.

8.5 Growth Kinetics of Hydrothermal ZnO.

8.6 Properties of Bulk Hydrothermal ZnO.

8.7 Conclusion.

9 Growth and Characterization of GaN/ZnO Heteroepitaxy and ZnO-Based Hybrid Devices (Ryoko Shimada and Hadis Morkoc).

9.1 Introduction.

9.2 Growth of GaN/ZnO.

9.3 Compositional Analysis.

9.4 Structural Analysis.

9.5 Surface Studies.

9.6 Optical Properties.

9.7 Electrical Properties.

9.8 GaN/ZnO Hybrid Devices.

9.9 Conclusions.

10 Room Temperature Stimulated Emission and ZnO-Based Lasers (D.M. Bagnall).

10.1 Introduction.

10.2 Emission Mechanisms.

10.3 Stimulated Emission.

10.4 Zinc Oxide Lasers.

10.5 Conclusions.

11 ZnO-Based Ultraviolet Detectors (Jian Zhong and Yicheng Lu).

11.1 Introduction.

11.2 Photoconductivity in ZnO.

11.3 ZnO Film-Based UV Photodetectors.

11.4 ZnO NW UV Photodetectors.

11.5 Conclusions.

12 Room-Temperature Stimulated Emission from ZnO Multiple Quantum Wells Grown on Lattice-Matched Substrates (Takayuki Makino, Yusaburo Segawa, Masashi Kawasaki and Hideomi Koinuma).

12.1 Introduction.

12.2 Experimental Details.

12.3 Quantum Confinement Effect of Excitons in QWs.

12.4 Exciton–Phonon Interaction in QWs.

12.5 The Localization Mechanism of the Exciton in a QW.

12.6 Time-Resolved Luminescence in ZnO QWs.

12.7 Stimulated Emission in MQWs.

12.8 Summary.

Acknowledgements.

References.

Index.

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優惠價:90 10893
若需訂購本書,請電洽客服 02-25006600[分機130、131]。